Third-generation semiconductor materials

What is Third-generation semiconductor materials

This is determined by the material. Semiconductor materials are important materials for making transistors, integrated circuits, power electronic devices, and optoelectronic devices.

Its development has gone through three stages: The first-generation material is silicon, represented by silicon (Si) and germanium (Ge), which is the industrial park of the first-generation semiconductor. 

The second-generation materials are represented by gallium arsenide (GaAs), indium phosphide (InP), and gallium phosphide (GaP), which were born for the 4G era and are currently used for most communication equipment. 

Since the 21st century, the third-generation semiconductor materials, represented by the four major representatives of gallium nitride (GaN), silicon carbide (SiC), zinc oxide (ZnO), and diamond, have begun to show their ground. The third-generation semiconductor materials have characteristics such as wider band gap, higher thermal conductivity, higher radiation resistance, and greater electron saturation drift rate. The third-generation semiconductor materials can achieve better electron concentration and motion control, and are more suitable for the production of high-temperature, high-frequency, radiation-resistant and high-power electronic devices, and have important application values in the fields of optoelectronics and microelectronics. At present, the hot 5G base stations, new energy vehicles and fast charging are all important application areas for third-generation semiconductors.