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2inch
FineWin
Detailed specification:
| Item | 2Sapphire Substrates | |
| Size | 2inch, 3inch, 4inch, 6inch | |
| Growth Method | KY | |
| Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
| Orientation | C-plane(0001) off M-axis(10-10) 0.3°,0.5°,1°,1.5°,2°,3° and others | |
| Thickness | 430 μm; 500 μm; 650 μm +/- 25 μm | |
| Primary Flat Orientation | A-plane(11-20) +/- 0.2° | |
| Front surface | Epi-polished, Ra < 0.2 nm (by AFM) | |
| Back surface | Epi-polished, Ra < 0.2 nm (by AFM) | Fine ground, Ra = 0.8 μm to 1.2 μm |
| TTV | < 15 μm | |
| BOW | < 15 μm | |
| WARP | < 15 μm | |
| Cleaning | Class 100 cleanroom cleaning and vacuum packaging, | |
| Packaging | 25 pieces in one cassette packaging or single piece packaging. | |
Application：
Sapphire is a material of a unique combination of physical, chemical and optical properties, which make it resistant to high temperature, thermal shock, water and sand erosion, and scratching. It is a superior window material for many IR applications from 3µm to 5µm. C-plane sapphire substrates are widely used to grow III-V and II-VI compounds such as GaN for blue LED and laser diodes, while R-plane sapphire substrates are used for the hetero-epitaxial deposition of silicon for microelectronic IC applications.
