BBO (beta-BaB2O4) is an excellent non-linear crystal for frequency-doubling (SHG) of Visible and Near IR laser light, OPO/OPG/OPA pumped by ultrafast pulses of wavelengths in the Near IR to UV, and sum-frequency mixing (SFM) into the Visible to the deep UV. BBO is one of the few practical crystal for use below 500 nm in SHG and SFM.
BBO is very good for tunable laser sources, such as ultrafast Ti:Sapphire or dye lasers. And it is also widely used for SHG, 3HG, 4HG, and autocorrelation of femtosecond and picosecond Ti:Sapphire lasers; SHG, 3HG, 4HG, 5HG of YAG lasers at 1064 nm and 1320 nm to yield output of 212-660nm; SHG of tunable dye or solid-state laser sources from 410-750 nm to yield output of 205-375 nm
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FEATURES:
Broad phase matchable range from 409.6 nm to 3500 nm;
Wide transmission region from 190 nm to 3500 nm;
Large effective second-harmonic-generation (SHG) coefficient
Wide temperature-bandwidth of about 55℃.
High frequency conversion efficiency (equivalent to 6 times of KDP crystal);
Good optical uniformity (δ N ≈10-6/cm);
High laser damage threshold, about 10GW/cm2 (100ps width, 1064nm);
Crystal Structure
Crystal Structure | Trigonal, space group R3c |
Cell Parameters | a = b = 12.532Ã, c = 12.717Ã…, Z = 6 |
Melting point | 1095+ 5°C |
Transition temperature | 925+ 5°C |
Optical homogeneity | d n ~ 10-6/cm |
Mohs hardness | 4 |
Density | 3.85 g/cm3 |
Absorption Coefficient | < 0.1%/cm (at 1064nm) |
Specific heat | 490 J/kg/°C |
Hygroscopic susceptibility | low |
Thermal expansion coefficients | a, 4 x 10-6/K; c, 36 x 10-6/K |
Thermal conductivity | Perpendicular to c, 1.2 W/m/°C |
Linear Optical Properties
Transparency range | 189-3500 nm |
Refractive indices: | ne = 1.5425, no = 1.6551 @ 1064 nm |
Therm-optic coefficients | dno/dT = -9.3 x 10-6/°C |
Sellmeier Equations (l in mm) | no2 (l) = 2.7359 - 0.01354l2+ 0.01878/(l2-0.01822) |
Nonlinear Optical Properties
Phase-matchable output wavelength | 189 - 1750 nm |
NLO coefficients | d11 = 5.8 x d36(KDP) |
Electro-optic coefficients | y11 = 2.7 pm/V |
Half-wave voltage | 48 KV (at 1064 nm) |
Damage threshold | 5 GW/cm2 (10 ns) @1064nm |