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SiC is a semiconductor material known for its superior properties compared to silicon, including high thermal conductivity, high voltage resistance, and high efficiency at elevated temperatures. These qualities make SiC ideal for power electronics applications in industries like automotive, renewable energy, and industrial power systems.
SiC wafers are semiconductors made from silicon carbide. Developed in 1893, this material is ideal for a variety of applications. In particular, it is excellent for Schottky diodes, Junction Barrier Schottky diodes, switches, and metal oxide semiconductor field-effect transistors. Because of its high hardness, it is a great choice for power electronic components.
Electric Vehicles (EVs): For traction inverters, onboard chargers, and DC-DC converters.
Renewable Energy: Inverters for solar panels and wind turbines.
Industrial Systems: Motor drives and high-power equipment.
Aerospace and Defense: High-efficiency power systems in harsh environments.
FineWin wafers provide domestic High quality Conductive (Conductive), Semi-insulating (Semi-insulating), HPSI (high Purity semi-insulating) silicon carbide substrate.
The Specification of SiC wafers we can provide.
1. 4H 4inch Ntype SiC wafers
2. 4H 4inch SItype SiC wafers
3. 4H 6inch SItype SiC wafers
4. 4H 6inch Ntype SiC wafers
5. 4H 8inch SItype SiC wafers
6. 4H 8inch Ntype SiC wafers