4inch Ntype SiC Wafers
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4inch Ntype SiC Wafers

Finewin Wafers offers the best selection and prices for high-quality silicon carbide wafers and substrates up to 8-inch diameters with N and semi-insulating types.
 
Silicon carbide (SiC) material has become the representative of the third generation of semiconductor materials. Silicon carbide (SiC) single crystal material has a large band gap width (~Si 3 times), high thermal conductivity (~Si 3.3 times or GaAs 10 times), high electron saturation migration rate (~Si 2.5 times), high breakdown electric field (~Si 10 times or GaAs 5 times) and other outstanding characteristics.
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Product Description

Advantages of Silicon Carbide

Hardness

There are numerous advantages to using silicon carbide over more traditional silicon substrates. One of the major advantages is its hardness. This gives the material many advantages, in high speed, high temperature and/or high voltage applications.

Silicon carbide wafers have high thermal conductivity, which means they can transfer heat from one point to another well. This improves its electrical conductivity and ultimately miniaturization, one of the common goals of switching to SiC wafers.

Thermal capabilities

Silicon carbide substrates also have a low coefficient for thermal expansion. Thermal expansion is the amount and direction a material expands or contracts as it heats up or cools down. The most common explanation is ice, although it behaves opposite of most metals, expanding as it cools and shrinking as it heats up. Silicon carbide’s low coefficient for thermal expansion means that it does not change significantly in size or shape as it is heated up or cooled down, which makes it perfect for fitting into small devices and packing more transistors onto a single chip.

Another major advantage of these substrates is their high resistance to thermal shock. This means they have the ability to change temperatures rapidly without breaking or cracking. This creates a clear advantage when fabricating devices as it is another toughness characteristic that improves the lifetime and performance of silicon carbide in comparison to traditional bulk silicon.

On top of its thermal capabilities, it is a very durable substrate and does not react with acids, alkalis or molten salts at temperatures up to 800°C. This gives these substrates versatility in their applications and further assists their ability to out perform bulk silicon in many applications.

Its strength at high temperatures also allows it to safely operate at temperatures over 1600°C. This makes it a suitable substrate for virtually any high temperature application.


The Specification of SiC wafers we can provide.

1. 4H 4inch Ntype SiC wafers 

2. 4H 4inch SItype SiC wafers

3. 4H 6inch SItype SiC wafers

4. 4H 6inch Ntype SiC wafers

5. 4H 8inch SItype SiC wafers

6. 4H 8inch Ntype SiC wafers




specification
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