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4inch
FineWin
Detailed specification:
| Item | 4-inch C-plane(0001) 650μm Sapphire Wafers | |
| Growth Method | KY | |
| Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
| Orientation | Cplane (0001)+/- 0.1° or Cplane off Mplane0.2+/- 0.1° | |
| Thickness | 650 μm +/- 25 μm | |
| Primary Flat Orientation | A-plane(11-20) +/- 0.2° | |
| Primary Flat Length | 30.0 mm +/- 1.0 mm | |
| Front surface | Epi-polished, Ra < 0.2 nm (by AFM) | |
| Back surface | Epi-polished, Ra < 0.2 nm (by AFM) | Fine ground, Ra = 0.8 μm to 1.2 μm |
| TTV | < 20 μm | |
| BOW | < 20 μm | |
| WARP | < 20 μm | |
| Cleaning | Class 100 cleanroom cleaning and vacuum packaging, | |
| Packaging | 25 pieces in one cassette packaging or single piece packaging. | |
Application:
Sapphire substrates are ideal for use instead of glass substrates when optical transmission is required in the ultraviolet (above 200 nm) or infrared (below 5 μm) range. Low-temperature optical measurements will also benefit from the higher thermal conductivity of sapphire substrates, and they may also be used in high temperature environments up to 2300 K.
