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Crystal Physical Parameters:
Crystal symmetry | Trigonal, 3m |
Lattice constant, A | a = 5.154 c = 13.783 |
Density, g/cm3 | 7.45 |
Melting point , °C | 1650 |
Curie point , °C | 605 |
Mohs hardness | 6 |
Thermal expansion coefficient, 10-6/ °C | aa = 16 ac = 4 |
Thermal conductivity , mW/cm °C | 46 |
Dielectric Constant (@ 100 KHz) | ea = 54 ec = 43 |
Refractive indices @ 633 nm | no = 2.175 ne = 2.180 |
Pyroelectric Coefficient: | -2.3 10-4 C/°C/m2 |
Innovation:
Through the transformation of the rotation and pulling system of the crystal growth equipment, the stability of the crystal growth interface and growth rate is higher, and the influence of crystal rotation and crystal lift disturbance on the melt-solid-liquid interface during the crystal growth process is reduced. The defects generated; the self-created simulated crystal growth system (CSCGS) can design the crystal shape according to the requirements, and the microcomputer chip processes the precise sensor signal according to the crystal growth state to control the crystal shape change. Independently designed a set of temperature fields for the growth of ultra-low gradient flat interface, which makes the grown optical grade crystals of better quality.
