Silicon Oxide Wafer SiO2 Thin Film
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Silicon Oxide Wafer SiO2 Thin Film

The silicon dioxide wafer refers to the thermal growth of a uniform dielectric film on the surface of the silicon wafer, which is used as an insulation or mask material. The oxidation process includes high temperature dry oxygen oxidation and high temperature wet oxygen oxidation.
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Product Description

What is Silicon Oxide Wafer?

Among semiconductor technology, SiO2 thin film layers are mainly used as dielectric material and more recently, they are integrated in MEMS (Micro Electro Mechanical Systems) devices. The simplest way to produce silicon oxide layers on silicon wafers is to oxidize silicon with oxygen.


The oxidation process includes high temperature dry oxygen oxidation and high temperature wet oxygen oxidation.


Dry oxidation typically takes place at temperatures from 850°C up to 1200°C and it demonstrates low growth rates. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.


The features of Silicon Oxide Wafer?

1.The thickness of the oxide layer is uniform

2.Good flatness

3.Small dimensional tolerances 

4.The surface is smooth and flawless 


Specification

SiO2

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