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Products specifications:
take 4 inch N type Si-doped as an example;
| Parameter | Specification | UOM |
| Growth method | VGF | |
| Conduct Type | N | |
| Dopant | Si | |
| Orientation | (100)15 deg off toward<111>A±0.5 | |
| Orientation Angle | 180 deg | |
| OF Orientation | EJ(0-1-1) ±0.5 deg | |
| OF Length | 32±1 | mm |
| IF Orientation | EJ(0-1-1) ±0.5 deg | |
| IF Length | 18±1 | mm |
| Diameter | 100±0.2 | mm |
| CC | 0.4E18~4E18 | cm-3 |
| Resistivity | (1.2-9.9) ×10-3 | Ω ·cm |
| Mobility | 1000-3000 | cm²/Vs |
| EPD | ≤3000 | cm² |
| Thickness | 350±25 | um |
| TTV | <10 | um |
| TIR | <15 | um |
| Bow | <15 | um |
| Warp | <15 | um |
| Laser Marking | NONE | |
| Surface | SSP | |
| Particle Count1 | ≤40/wafer@>0.3um | |
| Packaging | Single wafer container |
What we can supply:
1、N type, P type, insulating GaAs wafers
2、2inch, 3inch, 4inch wafers are availble.
