Gallium Arsenide wafers (GaAs wafers)
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Gallium Arsenide wafers (GaAs wafers)

Gallium arsenide Applications Include: 

  • Microwave frequency integrated circuits
  • Monolithic microwave integrated circuits
  • Infrared light-emitting diodes
  • Laser Diodes
  • Solar Cells
  • Optical Windows
Availability:
  • FineWin
Product Description

Products specifications:

take 4 inch N type Si-doped as an example;



ParameterSpecificationUOM
Growth methodVGF

Conduct TypeN
DopantSi
Orientation(100)15 deg off toward<111>A±0.5
Orientation Angle180 deg
OF OrientationEJ(0-1-1) ±0.5 deg
OF Length32±1mm
IF OrientationEJ(0-1-1) ±0.5 deg
IF Length18±1mm
Diameter100±0.2mm
CC0.4E18~4E18cm-3
Resistivity(1.2-9.9) ×10-3Ω ·cm
Mobility1000-3000cm²/Vs
EPD≤3000cm²
Thickness350±25um
TTV<10um
TIR<15um
Bow<15um
Warp<15um
Laser MarkingNONE
SurfaceSSP
Particle Count1≤40/wafer@>0.3um
PackagingSingle wafer container



What we can supply:

1、N type, P type, insulating GaAs wafers

2、2inch, 3inch, 4inch wafers are availble.


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