Freestanding GaN Substrates
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Freestanding GaN Substrates

Freestanding (gallium nitride)GaN substrate wafer is used for UHB-LED and LD. The material is Grown by hydride vapour phase epitaxy (HVPE) technology. Our GaN substrate has low defect density.
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Product Description

We can provide undoped Freestanding GaN Substrates, Si-doped Freestanding GaN Substrates, as well as Fe-doped Semi-insulating GaN Substrates.


Specifications:

1、undoped

GaN bulk undoped

2、Si-doped

GaN si-doped

3、Fe-doped

GaN Fe doped

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   86-15938119156
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